Determination of Energy Band Gap In Semiconductor

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Determination of Energy Band Gap In Semiconductor

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Determination of Energy Band Gap In Semiconductor

Object:

To draw the characteristics of a P-N junction diode for reverse saturation current and temperature.
To determine the energy band gap in a P-N junction diode.

Features:

The board consists of the following built-in parts :
01. 2V D.C. at 10mA, regulated power supply.
02. Digital microammeter, 3½ digits having range 200mA D.C.
03. Semiconductor diode.
04. Thermometer 0-110 °C.
05. Oven, electrically heated to heat the semiconductor diode.
06. Mains ON/OFF switch and fuse.